IRF9540N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Features:- • Dynamic dV/dt rating • 100% avalanche rated • Fast switching • Ease of paralleling • New high voltage benchmark • P-Channel • Advanced process technology Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity P-Channel Drain-Source Breakdown Voltage (Vds) -100V Continuous Drain Current (Id) -23A Drain-Source Resistance (Rds On) 0.117Ohms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 97 nC Operating Temperature Range -55 – 175°C Power Dissipation (Pd) 140W
