IRF740 is type of N-Channel enhancement mode power field effect transistors which are using planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. Features:- • Low gate charge • Low Crss (typical 35 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 400V Continuous Drain Current (Id) 10A Drain-Source Resistance (Rds On) 0.54Ohms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 53 nC Operating Temperature Range -55 – 150°C Power Dissipation (Pd) 134W
