IRF530 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Features:- • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Compliant to RoHS directive 2002/95/EC Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 100V Continuous Drain Current (Id) 17A Drain-Source Resistance (Rds On) 90mOhms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 37 nC Operating Temperature Range -55 – 175°C Power Dissipation (Pd) 70W
