Third generation power MOSFETs from the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. Features :- Dynamic dV/dt rating Repetitive avalanche rated Fast switching Ease of paralleling Simple drive requirements Specifications :- Drain-Source Breakdown Voltage Minimum : 500V Temperature Coefficient type : 0.061V/°C Gate-Source Threshold Voltage Minimum : 2.0V Gate-Source Threshold Voltage Maximum : 4.0V Gate-Source Leakage Maximum : 100nA Zero Gate Voltage Drain Current Maximum : 250μA Drain-Source On-State Resistance Maximum : 1.5Ω Forward Transconductance minimum : 2.5S
